METHOD FOR DEPOSITING OXIDE LAYER, AND LAYERED SUBSTRATE FOR EPITAXIAL GROWTH AND PROCESS FOR PRODUCING SAME

WIPO Patent Application WO/2015/033808

A1

The purpose of the present invention is to provide a method for depositing an oxide layer on a metal substrate, the method being capable of forming the oxide layer which has more improved crystal orientation than the outermost layer of the metal substrate. The method comprises depositing an oxide layer on a metal substrate (20) by RF magnetron sputtering, and is characterized by including a step in which a metal substrate (20) which has undergone crystal orientation and in which the outermost layer has a degree of c-axis orientation of 99% or higher is subjected to RF magnetron sputtering while setting an angle (α) at 15° or less, the angle (α) being formed by the perpendicular from the deposition position (20a) on the metal substrate (20) to the target (10) and the line extending from the deposition position (20a) to the point (10a) within the target (10) at which the magnetic-flux density in the perpendicular direction is zero and which is located nearest to the deposition position (20a).

HASHIMOTO YUSUKE (JP)
KUROKAWA TEPPEI (JP)
KOSHIRO TAKASHI (JP)
OKAYAMA HIRONAO (JP)
NAGAISHI TATSUOKI (JP)
OHKI KOTARO (JP)
HONDA GENKI (JP)

PCT/JP2014/072094

March 12, 2015

August 25, 2014

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TOYO KOHAN CO LTD (JP)
SUMITOMO ELECTRIC INDUSTRIES (JP)

C23C14/35; C23C14/08; C30B29/16; H01B12/06; H01B13/00; C30B29/22

JP2010238634A	2010-10-21
JP2008310986A	2008-12-25
JP2004006063A	2004-01-08
JP2010007164A	2010-01-14
JP2002509988A	2002-04-02
JP2011018598A	2011-01-27
JP2012243499A	2012-12-10
JP2013182899A	2013-09-12

See also references of EP 3042978A4

HIRAKI Yusuke et al. (JP)
Yusuke Hiraki (JP)

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