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Title:
METHOD OF ELIMINATING RESIDUAL CARBON FROM FLOWABLE OXIDE FILL MATERIAL
Document Type and Number:
WIPO Patent Application WO2004070817
Kind Code:
A3
Abstract:
Methods of forming an oxide layer such as high aspect ratio trench isolations, and treating the oxide substrate to remove carbon, structures formed by the method, and devices and systems incorporating the oxide material are provided.

Inventors:
LI LI (US)
LI WEIMIN (US)
Application Number:
PCT/US2004/003236
Publication Date:
December 23, 2004
Filing Date:
February 04, 2004
Export Citation:
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Assignee:
MICRON TECHNOLOGY INC (US)
LI LI (US)
LI WEIMIN (US)
International Classes:
C23C16/04; C23C16/40; C23C16/56; H01L21/316; H01L21/762; (IPC1-7): H01L21/316; C23C16/40; H01L21/3105; H01L21/3065; H01L21/762
Foreign References:
EP0519079A11992-12-23
EP1037275A12000-09-20
US20020187628A12002-12-12
EP1077480A12001-02-21
US20010039125A12001-11-08
US20020105084A12002-08-08
US6485815B12002-11-26
US6294476B12001-09-25
Other References:
BORVON G., GOULLET A. ET AL.: "Analysis of low-k organosilicon and low-density silica films deposited in HMDSO plasmas", PLASMA AND POLYMERS, vol. 7, no. 4, December 2002 (2002-12-01), USA, pages 341 - 352, XP008035615
ANDO ET AL: "Shallow trench isolation filling by pressure-controlled twp-steps TEOS-O3 CVD", ELECTROCHEMICAL SOCIETY PROCEEDINGS, ELECTROCHEMICAL SOCIETY, PENNINGTON, NJ, US, vol. 97-30, 31 August 1997 (1997-08-31), pages 231 - 242, XP002117839, ISSN: 0161-6374
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