Title:
METHOD FOR ETCHING MAGNETIC LAYER
Document Type and Number:
WIPO Patent Application WO/2016/143594
Kind Code:
A1
Abstract:
A method according to an embodiment of the present invention comprises a step for mounting, on an electrostatic chuck provided in a process chamber of a plasma processing apparatus, a workpiece having a magnetic layer, and a step for generating a plasma of a process gas, which contains isopropyl alcohol and carbon dioxide, in the process chamber to etch the magnetic layer. In an embodiment, the pressure in the process chamber is set to be 1.333 Pa or less, the temperature of the electrostatic chuck is set to be -15°C or less, and the partial pressure of the isopropyl alcohol is set to be less than or equal to the saturation vapor pressure thereof.
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Inventors:
TAHARA SHIGERU (JP)
NISHIMURA EIICHI (JP)
NISHIMURA EIICHI (JP)
Application Number:
PCT/JP2016/056164
Publication Date:
September 15, 2016
Filing Date:
March 01, 2016
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065; H01L21/8246; H01L27/105; H01L43/08; H01L43/12
Foreign References:
| JP2011014679A | 2011-01-20 | |||
| JP4354519B2 | 2009-10-28 | |||
| JP2012142398A | 2012-07-26 | |||
| JP2004332045A | 2004-11-25 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
Yoshiki Hasegawa (JP)
Yoshiki Hasegawa (JP)
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