Title:
METHOD FOR ETCHING MULTILAYER FILM
Document Type and Number:
WIPO Patent Application WO/2017/018256
Kind Code:
A1
Abstract:
The present invention suppresses separation and/or cracking of a multilayer film that comprises a layer formed from a metal magnetic material during etching of the multilayer film. According to one embodiment of the present invention, a multilayer film that comprises a layer formed from a metal magnetic material is etched in a state where the pressure within a process chamber of a plasma processing apparatus is set to a first pressure that is a relatively high pressure. Subsequently, the multilayer film is further etched in a state where the pressure within the process chamber is set to a second pressure that is lower than the first pressure.
Inventors:
KUBO TAKUYA (JP)
KANG SONG YUN (JP)
MORIMOTO TAMOTSU (JP)
KANG SONG YUN (JP)
MORIMOTO TAMOTSU (JP)
Application Number:
PCT/JP2016/071053
Publication Date:
February 02, 2017
Filing Date:
July 15, 2016
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065; C23F4/00; H01L21/8246; H01L27/105; H01L43/08
Foreign References:
| JP2014107364A | 2014-06-09 | |||
| JPH0485928A | 1992-03-18 | |||
| JPH0855829A | 1996-02-27 | |||
| JP2014099497A | 2014-05-29 | |||
| JP2014063847A | 2014-04-10 | |||
| JP2014183184A | 2014-09-29 | |||
| US20150072439A1 | 2015-03-12 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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