Title:
METHOD OF ETCHING OBJECT TO BE PROCESSED
Document Type and Number:
WIPO Patent Application WO/2017/082373
Kind Code:
A1
Abstract:
An etching rate during plasma etching is made uniform. A plasma processing device 10 is provided with a holding structure 18 that holds a wafer W, and a processing container 12 that houses the holding structure 18. A method MT is provided with a step of etching the wafer W using plasma generated in the processing container 12, the step including a process of inclining and rotating the holding structure 18 holding the wafer W during execution of the etching, and the process successively creating a plurality of inclined rotation states RT(φ, t) with respect to the holding structure 18 holding the wafer W, wherein, in the inclined rotation states, the wafer W is rotated about a central axis over a predetermined process time t while maintaining a state in which the central axis of the wafer W is inclined with respect to a reference axis of the processing container 12 which is in the same plane as the central axis, and wherein, in the plurality of inclined rotation states, a combination of a value φ of an inclination angle AN of the central axis with respect to the reference axis and the process time t differs for each of the plurality of inclined rotation states.
Inventors:
UMEZAWA YOSHIHIRO (JP)
SATO JUN (JP)
MAEDA KIYOSHI (JP)
OHATA MITSUNORI (JP)
MATSUMOTO KAZUYA (JP)
SATO JUN (JP)
MAEDA KIYOSHI (JP)
OHATA MITSUNORI (JP)
MATSUMOTO KAZUYA (JP)
Application Number:
PCT/JP2016/083455
Publication Date:
May 18, 2017
Filing Date:
November 11, 2016
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065; C23F4/00; H01L21/683; H01L21/8246; H01L27/105; H01L43/08; H01L43/12; H05H1/46
Domestic Patent References:
| WO2015097942A1 | 2015-07-02 |
Foreign References:
| JP2002540548A | 2002-11-26 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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