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Title:
METHOD FOR EVALUATING OXIDE SEMICONDUCTOR THIN FILM, METHOD FOR MANAGING QUALITY OF OXIDE SEMICONDUCTOR THIN FILM, AND EVALUATION ELEMENT AND EVALUATION DEVICE USED IN ABOVE EVALUATION METHOD
Document Type and Number:
WIPO Patent Application WO/2015/083666
Kind Code:
A1
Abstract:
 The present invention provides a method for accurately and easily measuring, and evaluating/predicting/estimating the electrical resistance of an oxide semiconductor thin film, and a method for managing the quality of an oxide semiconductor. The method for evaluating an oxide semiconductor thin film according to the present invention includes: a first step for irradiating, with excitation light and microwaves, a sample on which an oxide semiconductor thin film is formed, measuring the maximum value of the reflected waves produced by reflection of the microwaves by the oxide semiconductor thin film which changes due to the excitation light irradiation, then stopping the excitation light irradiation and measuring the change in reflectivity with regards to the reflected waves produced by reflection of the microwaves by the oxide semiconductor thin film after the excitation light irradiation has stopped; and a second step for calculating a parameter corresponding to the slow decay observed after the excitation light irradiation has stopped from the change in reflectivity and evaluating the electrical resistivity of the oxide semiconductor thin film.

Inventors:
HAYASHI KAZUSHI
KAWAKAMI NOBUYUKI
MIKI AYA
KUGIMIYA TOSHIHIRO
Application Number:
PCT/JP2014/081744
Publication Date:
June 11, 2015
Filing Date:
December 01, 2014
Export Citation:
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Assignee:
KOBE STEEL LTD (JP)
International Classes:
H01L21/66; G01N22/00; H01L21/336; H01L29/786
Foreign References:
JP2012033857A2012-02-16
JP2011054863A2011-03-17
JP2010123872A2010-06-03
JP2002098634A2002-04-05
JP2009164393A2009-07-23
JP2012033857A2012-02-16
Other References:
KOTAI BUTSURI, SOLID STATE PHYSICS, vol. 44, 2009, pages 621
NATURE, vol. 432, 2004, pages 488
Attorney, Agent or Firm:
UEKI, Kyuichi et al. (JP)
Hisakazu Ueki (JP)
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