Title:
METHOD FOR FABRICATING NANOMETRE LINE GRID STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2018/214202
Kind Code:
A1
Abstract:
Provided is a method for fabricating a nanometre line grid structure. The method involves firstly alternately hot pressing a plurality of recessed grooves and a plurality of bumps on a hot plastic substrate by means of an imprint mould, then fabricating a metal thin film on the plurality of recessed grooves and the plurality of bumps, next shifting the metal thin film on the bumps to a line grid carrier substrate using a metal adhesive, and finally stripping the hot plastic substrate to prepare a nanometre line grid structure. Compared with the prior art, the whole process requires no photoresist coating, remaining photoresist layer removal, and metal etching processes, avoiding the problems in the prior art of poor etching precision, the remaining photoresist layer being difficult to remove, and the line grid structure collapsing in the metal etching process; the fabrication procedure for a nanometre line grid structure can be simplified; the time for fabricating a nanometre line grid structure can be shortened; and the production efficiency and production yield of nanometre line grid structures can be increased.
Inventors:
LI MINGHUI (CN)
Application Number:
PCT/CN2017/089261
Publication Date:
November 29, 2018
Filing Date:
June 20, 2017
Export Citation:
Assignee:
SHENZHEN CHINA STAR OPTOELECT (CN)
International Classes:
H01L21/302; G02B5/30; H01L21/306
Foreign References:
| CN106324742A | 2017-01-11 | |||
| CN102308234A | 2012-01-04 | |||
| CN103828083A | 2014-05-28 | |||
| CN103842861B | 2017-03-22 | |||
| US8263194B2 | 2012-09-11 | |||
| JP4914012B2 | 2012-04-11 | |||
| CN101159179A | 2008-04-09 |
Attorney, Agent or Firm:
COMIPS INTELLECTUAL PROPERTY OFFICE (CN)
Download PDF:
Previous Patent: TRANSFER DEVICE AND TRANSFER METHOD OF MICRO LIGHT EMITTING DIODE
Next Patent: MANUFACTURING METHOD FOR TFT SUBSTRATE
Next Patent: MANUFACTURING METHOD FOR TFT SUBSTRATE