Title:
METHOD FOR FABRICATING RESONATOR
Document Type and Number:
WIPO Patent Application WO/2020/124662
Kind Code:
A1
Abstract:
The present application relates to the technical field of semiconductors, and disclosed is a method for fabricating a resonator. The method for fabricating the resonator comprises: pre-treating a substrate, and changing a preset reaction rate of a preset region portion of the substrate so that the preset reaction rate corresponding to the preset region portion is greater than a preset reaction rate corresponding to a non-preset region portion; performing a preset reaction on the substrate to generate a sacrificial material portion, the sacrificial material portion comprising an upper half portion located above an upper surface of the substrate and a lower half portion located below a lower surface of the substrate; forming a multilayer structure on a sacrificial material layer, the multilayer structure successively comprising from bottom to top a lower electrode layer, a piezoelectric layer and an upper electrode layer; and removing the sacrificial material portion. Compared to traditional fabrication methods, the method above for fabricating a resonator more easily controls the surface roughness of a working area of the resonator.
Inventors:
LI LIANG (CN)
LV XIN (CN)
LIANG DONGSHENG (CN)
LIU QINGLIN (CN)
MA JIE (CN)
GAO YUAN (CN)
LV XIN (CN)
LIANG DONGSHENG (CN)
LIU QINGLIN (CN)
MA JIE (CN)
GAO YUAN (CN)
Application Number:
PCT/CN2018/124355
Publication Date:
June 25, 2020
Filing Date:
December 27, 2018
Export Citation:
Assignee:
THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION (CN)
International Classes:
H03H3/02
Foreign References:
| CN101465628A | 2009-06-24 | |||
| CN105680813A | 2016-06-15 | |||
| CN108736856A | 2018-11-02 | |||
| CN101436565A | 2009-05-20 | |||
| US20110084779A1 | 2011-04-14 |
Attorney, Agent or Firm:
SHIJIAZHUANG GOWELL INTELLECTUAL PROPERTY LAW FIRM (CN)
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