METHOD OF FORMING CRYSTALLIZED SEMICONDUCTOR LAYER, METHOD OF FABRICATING THIN FILM TRANSISTOR, THIN FILM TRANSISTOR, AND DISPLAY APPARATUS

Title:

METHOD OF FORMING CRYSTALLIZED SEMICONDUCTOR LAYER, METHOD OF FABRICATING THIN FILM TRANSISTOR, THIN FILM TRANSISTOR, AND DISPLAY APPARATUS

Document Type and Number:

WIPO Patent Application WO/2020/177080

Kind Code:

A1

Abstract:

A method of forming a crystallized semiconductor layer includes forming an insulating crystallization inducing layer on a base substrate; forming a semiconductor material layer on a side of the insulating crystallization inducing layer away from the base substrate by depositing a semiconductor material on the insulating crystallization inducing layer, the semiconductor material being deposited at a deposition temperature that induces crystallization of the semiconductor material; forming an alloy crystallization inducing layer including an alloy on a side of the semiconductor material layer away from the insulating crystallization inducing layer; and annealing the alloy crystallization inducing layer to further induce crystallization of the semiconductor material to form the crystallized semiconductor layer. Annealing the alloy crystallization inducing layer is performed to enrich a relatively more conductive element of the alloy to a side away from the base substrate, thereby forming an annealed crystallization inducing layer.

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Inventors:

QU LIANJIE (CN)
ZHAO HEBIN (CN)
QI YONGLIAN (CN)
QIU YUN (CN)
WANG DAN (CN)

Application Number:

PCT/CN2019/077007

Publication Date:

September 10, 2020

Filing Date:

March 05, 2019

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Assignee:

BOE TECHNOLOGY GROUP CO LTD (CN)
BEIJING BOE DISPLAY TECH CO (CN)

International Classes:

H01L21/02; H01L21/336; H01L29/45; H01L29/786

Foreign References:

CN106601823A	2017-04-26
CN101179013A	2008-05-14
CN105390443A	2016-03-09
CN106024639A	2016-10-12
US20160042959A1	2016-02-11
KR101333796B1	2013-11-29

Attorney, Agent or Firm:

TEE & HOWE INTELLECTUAL PROPERTY ATTORNEYS (CN)

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