Title:
METHOD FOR FORMING NITRIDE FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/079903
Kind Code:
A1
Abstract:
The present invention includes: a step for preparing a substrate that is a substrate for alternately laminating an oxide film and a nitride film to form a laminated structure, the substrate having a nitride film forming surface on the surface; and a step for supplying to the substrate a silicon raw material gas that contains silicon and fluorine, and a nitrogen-containing gas, and also generating plasma, and forming a nitride film that contains fluorine on the nitride film forming surface of the substrate.
Inventors:
ONODA HIROYUKI (JP)
OUCHI KENJI (JP)
OUCHI KENJI (JP)
Application Number:
PCT/JP2019/028095
Publication Date:
April 23, 2020
Filing Date:
July 17, 2019
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/316; C23C16/34; H01L21/31; H01L21/318; H01L21/336; H01L27/11582; H01L29/788; H01L29/792
Foreign References:
| JP2017168527A | 2017-09-21 | |||
| JP2016519429A | 2016-06-30 | |||
| JPH0641751A | 1994-02-15 | |||
| JP2017224789A | 2017-12-21 | |||
| JP2008060566A | 2008-03-13 | |||
| JP2016197719A | 2016-11-24 |
Other References:
FUJITA, SHIZUO ET AL.: "Recent Research and Development on Silicon Nitride Thin Films", OYO BUTURI, vol. 54, no. 12, 1985, pages 1250 (2) - 1266 (18), XP055702317
Attorney, Agent or Firm:
TAKAYAMA Hiroshi (JP)
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