METHOD FOR FORMING PZT FERROELECTRIC FILM - JAPAN ADVANCED INST OF SCIENCE AND TECH

Title:

METHOD FOR FORMING PZT FERROELECTRIC FILM

Document Type and Number:

WIPO Patent Application WO/2017/038676

Kind Code:

A1

Abstract:

The present invention comprises: a step for applying a liquid composition for forming a PZT ferroelectric film; a step for drying the film obtained by applying the liquid composition; a step for irradiating UV rays onto the dried film at a temperature of 150-200°C in an oxygen-containing atmosphere; and a step for firing and crystallizing a UV-irradiated-ferroelectric-film precursor film after the coating step, the drying step, and the UV irradiation step have been performed one or more times by raising the temperature in the oxygen-containing atmosphere at a speed of 0.5°C/second or higher or raising the temperature in the non-oxygen-containing atmosphere at a speed of 0.2°C/second or higher and holding the temperature at 400-500°C. The amount of the liquid composition applied in each cycle is set so that the thickness of the ferroelectric film is 150 nm or more for each application, and ozone is supplied during UV irradiation.

Inventors:

TAGASHIRA YUKI (JP)
SHIMURA REIJIRO (JP)
TAKAMURA YUZURU (JP)
LI JINWANG (JP)
SHIMODA TATSUYA (JP)
WATANABE TOSHIAKI (JP)
SOYAMA NOBUYUKI (JP)

Application Number:

PCT/JP2016/074959

Publication Date:

March 09, 2017

Filing Date:

August 26, 2016

Export Citation:

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Assignee:

JAPAN ADVANCED INST OF SCIENCE AND TECH (JP)
MITSUBISHI MATERIALS CORP (JP)

International Classes:

H01L41/43; H01L21/316; H01L21/8246; H01L27/105; H01L41/187; H01L41/318

Foreign References:

JP2011086819A	2011-04-28
JPH06234551A	1994-08-23
JP2005505911A	2005-02-24
JP2014192329A	2014-10-06

Other References: