Title:
METHOD FOR FORMING A RELIEF ON THE SURFACE OF A FUNCTIONAL LAYER
Document Type and Number:
WIPO Patent Application WO/2001/037046
Kind Code:
A1
Abstract:
A method for forming a relief on the surface of a functional layer consists of the following: a functional photoresistive layer is applied to a substrate. Thickness of the layer should not be less than the maximum height of the relief on the surface of the functional layer structures. Said photoresistive layer is then exposed to an electromagnetic radiation (according to a predetermined program) with a simultaneous development of exposed parts of the photoresist. An impulse laser radiation generator is used as a source of electromagnetic radiation. The generator should have a time period between successive impulses of not less than a time period needed for removing the exposed material of the photoresist from an exposed area (by means of one impulse) during the development of a hidden image. Once the development of the photoresistive layer is complete the resulting relief surface of the photoresistive layer is dried. An additional functional layer can be formed on the relief surface of the functional photoresistive layer. In this case the functional resistive layer is destroyed after the formation of the additional functional layer, and residues from the photoresist are removed from the formed relief surface of the additional layer.
Inventors:
RAKHOVSKY VADIM IZRAILOVICH (RU)
Application Number:
PCT/RU2000/000462
Publication Date:
May 25, 2001
Filing Date:
November 13, 2000
Export Citation:
Assignee:
RAKHOVSKY VADIM IZRAILOVICH (RU)
International Classes:
G03F1/00; G03F7/00; G03F7/20; (IPC1-7): G03F7/00; H01L21/312
Foreign References:
| SU1565302A1 | 1996-01-27 | |||
| US5843625A | 1998-12-01 | |||
| US5609995A | 1997-03-11 |
Attorney, Agent or Firm:
Ooo, Tsentr Innotec (49-404 Moscow, 3, RU)
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