METHOD FOR FORMING RESIST PATTERN AND RESIST PATTERN

Title:

METHOD FOR FORMING RESIST PATTERN AND RESIST PATTERN

Document Type and Number:

WIPO Patent Application WO2004051380

Kind Code:

A8

Abstract:

A method for forming a resist pattern, which comprises a step of applying a positive resist composition comprising a resin component (A) containing an alkali-soluble unit in an mount less than 20 mol % and having an acid-dissociative group inhibiting the dissolution thereof in an alkali and thus exhibiting the enhancement in the solubility in an alkaline solution by the action of an acid, a component (B) generating an acid by the exposure to a light, and an organic solvent (C) capable of dissolving (A) and (B) components on a substrate, steps of pre-baking, selective exposure, heating after exposure, and an alkali development, a replacement step of at least once replacing a liquid present on the substrate at least once with a liquid for replacement and replacing the liquid for replacement with a liquid for the critical drying, and then a drying step of drying the liquid for the critical drying through a critical state. The method can be employed, in a process of forming a resist pattern, for preventing a fine resist pattern from falling down in a drying step after developing.

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Inventors:

KUBOTA NAOTAKA (JP)
ISHIKAWA KIYOSHI (JP)
SATO MITSURU (JP)
MATSUMIYA TASUKU (JP)
FUJII KAZUHIRO (JP)
SATO KENICHI (JP)

Application Number:

PCT/JP2003/015427

Publication Date:

November 25, 2004

Filing Date:

December 02, 2003

Export Citation:

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Assignee:

TOKYO OHKA KOGYO CO LTD (JP)
HITACHI SCIENCE SYSTEMS LTD (JP)
HITACHI HIGH TECH CORP (JP)
KUBOTA NAOTAKA (JP)
ISHIKAWA KIYOSHI (JP)
SATO MITSURU (JP)
MATSUMIYA TASUKU (JP)
FUJII KAZUHIRO (JP)
SATO KENICHI (JP)

International Classes:

G03F7/039; G03F7/30; G03F7/32; G03F7/40; H01L21/027; (IPC1-7): G03F7/40; H01L21/027

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