METHOD FOR GROWING DIAMOND ON SILICON SUBSTRATE AND METHOD FOR SELECTIVELY GROWING DIAMOND ON SILICON SUBSTRATE

Title:

METHOD FOR GROWING DIAMOND ON SILICON SUBSTRATE AND METHOD FOR SELECTIVELY GROWING DIAMOND ON SILICON SUBSTRATE

Document Type and Number:

WIPO Patent Application WO/2023/157599

Kind Code:

A1

Abstract:

The present invention relates to a method for growing diamond on a silicon substrate by subjecting the silicon substrate surface to damage so that the Raman shift of a peak at 520 cm-1 in Raman spectroscopy is 0.1 cm-1 or more, or forming unevenness on the silicon substrate surface so that the surface roughness Sa measured by AFM is 10 nm or more, or both subjecting the silicon substrate surface to the damage and forming the unevenness thereon as a pretreatment, and growing diamond by a CVD method on the silicon substrate subjected to the pretreatment. A method for growing diamond on a silicon substrate and a method for selectively growing diamond on a silicon substrate are thereby provided.

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Inventors:

MATSUBARA TOSHIKI (JP)
SUZUKI KATSUYOSHI (JP)
TANAKA YUKI (JP)
SUZUKI ATSUSHI (JP)
SUZUKI KENTA (JP)
TAGA RYO (JP)
ABE TATSUO (JP)
OHTSUKI TSUYOSHI (JP)

Application Number:

PCT/JP2023/002500

Publication Date:

August 24, 2023

Filing Date:

January 26, 2023

Export Citation:

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Assignee:

SHINETSU HANDOTAI KK (JP)

International Classes:

H01L21/314; C01B32/25; C23C16/27; C30B25/18; C30B29/04; H01L21/31

Foreign References:

JPH0230697A	1990-02-01
JP2021525828A	2021-09-27

Attorney, Agent or Firm:

YOSHIMIYA Mikio et al. (JP)

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