Title:
METHOD FOR GROWING GALLIUM NITRIDE COMPOUND SEMICONDUCTOR CRYSTAL, AND GALLIUM NITRIDE COMPOUND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/1995/027815
Kind Code:
A1
Abstract:
In a method for growing a gallium nitride semiconductor crystal on a single-crystal substrate, the (011) or (101) face of perovskite containing group 13 (3B) rare-earth elements is used as the single-crystal substrate, so that a gallium nitride semiconductor crystal having an excellent crystallinity is formed on the surface of the substrate by epitaxial growth.
Inventors:
TOGAWA SEIJI (JP)
OKAZAKI HITOSHI (JP)
OKAZAKI HITOSHI (JP)
Application Number:
PCT/JP1995/000654
Publication Date:
October 19, 1995
Filing Date:
April 05, 1995
Export Citation:
Assignee:
JAPAN ENERGY CORP (JP)
TOGAWA SEIJI (JP)
OKAZAKI HITOSHI (JP)
TOGAWA SEIJI (JP)
OKAZAKI HITOSHI (JP)
International Classes:
C30B23/02; C30B25/02; H01L21/20; H01L33/16; H01L33/32; (IPC1-7): C30B23/00; H01L21/203
Foreign References:
| US1619011A | 1927-03-01 | |||
| US1955833A | 1934-04-24 | |||
| US3743568A | 1973-07-03 | |||
| US3929536A | 1975-12-30 | |||
| US4424753A | 1984-01-10 |
Other References:
See also references of EP 0711853A4
Download PDF:
Previous Patent: PALLADIUM COLLOID SOLUTION AND USE THEREOF
Next Patent: WOOL-COMBING MACHINE WITH INDIVIDUAL ELECTRIC DRIVES TO SEVERAL SPINDLES
Next Patent: WOOL-COMBING MACHINE WITH INDIVIDUAL ELECTRIC DRIVES TO SEVERAL SPINDLES