Title:
METHOD FOR GROWING SINGLE-CRYSTAL SILICON, METHOD FOR PRODUCING SILICON WAFER, AND SINGLE-CRYSTAL PULLING DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/223691
Kind Code:
A1
Abstract:
Provided is a method for growing single-crystal silicon in which a single-crystal pulling device comprising a chamber, a crucible for containing a silicon melt, a heating part for heating the silicon melt, a heat barrier disposed above the crucible so as to surround single-crystal silicon to be pulled out of the silicon melt, and an inert-gas feed part which feeds an inert gas passing between the single-crystal silicon and the heat barrier is used to pull up the single-crystal silicon while applying a horizontal magnetic field to the silicon melt. The heat barrier is disposed so that the vertical axis passing through the center of the opening of the heat barrier is offset from the vertical rotation axis of the crucible in a direction different from a direction along the application direction at the center of the horizontal magnetic field.
Inventors:
SUGIMURA WATARU (JP)
YOKOYAMA RYUSUKE (JP)
SAKAMOTO HIDEKI (JP)
FUJISE JUN (JP)
YOKOYAMA RYUSUKE (JP)
SAKAMOTO HIDEKI (JP)
FUJISE JUN (JP)
Application Number:
PCT/JP2023/013656
Publication Date:
November 23, 2023
Filing Date:
March 31, 2023
Export Citation:
Assignee:
SUMCO CORP (JP)
International Classes:
C30B29/06; C30B15/20
Foreign References:
| JP2019151503A | 2019-09-12 | |||
| JP2019151501A | 2019-09-12 |
Attorney, Agent or Firm:
KINOSHITA & ASSOCIATES (JP)
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