Title:
METHOD FOR MANUFACTURING 3C-SIC LAMINATED SUBSTRATE, 3C-SIC LAMINATED SUBSTRATE, AND 3C-SIC INDEPENDENT SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2024/029217
Kind Code:
A1
Abstract:
The present disclosure provides a method for manufacturing a 3C-SiC laminated substrate, the manufacturing method being characterized by comprising: a step in which a 3C-SiC single crystal film is epitaxially grown on a first single crystal silicon substrate; a step in which a support substrate is pasted to the upper surface of the 3C-SiC single crystal film; and a step in which the first single crystal silicon substrate is removed so as to manufacture a 3C-SiC laminated substrate. The purpose of the aforementioned is to provide a method for manufacturing a 3C-SiC laminated substrate. In particular, a method is provided by which a 3C-SiC laminated substrate having a large diameter such as 200 mmφ or 300 mmφ is obtained.
Inventors:
OHTSUKI TSUYOSHI (JP)
MATSUBARA TOSHIKI (JP)
SUZUKI ATSUSHI (JP)
ABE TATSUO (JP)
MATSUBARA TOSHIKI (JP)
SUZUKI ATSUSHI (JP)
ABE TATSUO (JP)
Application Number:
PCT/JP2023/022801
Publication Date:
February 08, 2024
Filing Date:
June 20, 2023
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
International Classes:
C30B29/36; C30B25/18; C30B33/06
Domestic Patent References:
| WO2021199426A1 | 2021-10-07 |
Foreign References:
| JPH10324599A | 1998-12-08 | |||
| JPS53146300A | 1978-12-20 | |||
| JPH11268995A | 1999-10-05 | |||
| JP2011023742A | 2011-02-03 |
Attorney, Agent or Firm:
YOSHIMIYA Mikio et al. (JP)
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