Title:
METHOD FOR MANUFACTURING ACTIVE MATRIX SUBSTRATE AND METHOD FOR MANUFACTURING ORGANIC EL DISPLAY DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/158840
Kind Code:
A1
Abstract:
In the gate electrode forming step according to the present invention, a metal film to be a gate electrode (18) of a TFT (7) is formed on a gate insulating film (17) covering an island-shaped semiconductor layer 16, the gate electrode (18) is formed by dry-etching the metal film, and plasma treatment using oxygen or nitrogen is performed with respect to the exposed gate electrode (18). Consequently, a needle crystal or a granular crystal is prevented from being formed, while suppressing deterioration of production efficiency.
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Inventors:
SAITOH TAKAO
KANZAKI YOHSUKE
MIWA MASAHIKO
YAMANAKA MASAKI
KANEKO SEIJI
KANZAKI YOHSUKE
MIWA MASAHIKO
YAMANAKA MASAKI
KANEKO SEIJI
Application Number:
PCT/JP2017/007891
Publication Date:
September 07, 2018
Filing Date:
February 28, 2017
Export Citation:
Assignee:
SHARP KK (JP)
International Classes:
H01L21/336; H01L29/786
Foreign References:
| JP2006332606A | 2006-12-07 | |||
| JP2006332603A | 2006-12-07 | |||
| JP2006332604A | 2006-12-07 | |||
| JPH10150200A | 1998-06-02 |
Attorney, Agent or Firm:
HARAKENZO WORLD PATENT & TRADEMARK (JP)
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