Title:
METHOD FOR MANUFACTURING ANNEALED WAFER AND ANNEALED WAFER
Document Type and Number:
WIPO Patent Application WO/2002/039496
Kind Code:
A1
Abstract:
A method for manufacturing an annealed wafer in which haze is suppressed thereby to improve the device characteristics by finding the relation between the angle of inclination of a wafer to be annealed with respect to (100) plane and the haze caused on the surface after annealing, and determining the inclination angle most suitable to suppress the haze. A silicon mirror wafer having a direction of crystal plane inclining at an angle of inclination $g(u) within a range of 0.1 ° < $g(u) < 0.2 ° with respect to the plane (100) or an equivalent plane is heat-treated in the atmosphere of a hydrogen gas, an inert gas, a nitrogen gas or their mixed gas.
Inventors:
AKIYAMA SHOJI (JP)
Application Number:
PCT/JP2001/009586
Publication Date:
May 16, 2002
Filing Date:
November 01, 2001
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
AKIYAMA SHOJI (JP)
AKIYAMA SHOJI (JP)
International Classes:
C30B33/00; H01L21/02; H01L21/26; H01L21/322; H01L21/324; H01L29/04; (IPC1-7): H01L21/322
Foreign References:
| US5966625A | 1999-10-12 | |||
| JPH05347256A | 1993-12-27 | |||
| JPH11121407A | 1999-04-30 | |||
| JPH08321443A | 1996-12-03 | |||
| JPH05152179A | 1993-06-18 |
Other References:
See also references of EP 1276141A4
Attorney, Agent or Firm:
Ishihara, Shoji (Wakai Bldg. 7-8 Higashi-Ikebukuro 3-chome Toshima-ku, Tokyo, JP)
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