METHOD OF MANUFACTURING CAP SUBSTRATE, METHOD OF MANUFACTURING MEMS DEVICE USING SAME, AND MEMS DEVICE

Title:

METHOD OF MANUFACTURING CAP SUBSTRATE, METHOD OF MANUFACTURING MEMS DEVICE USING SAME, AND MEMS DEVICE

Document Type and Number:

WIPO Patent Application WO/2016/163585

Kind Code:

A1

Abstract:

The present invention provides a method of manufacturing a cap substrate, a method of manufacturing a MEMS device using same, and a MEMS device. The method of manufacturing a cap substrate comprises the steps of: depositing a top surface insulating layer and a bottom surface insulating layer on the top surface and the bottom surface of a silicon substrate; photo patterning by using a photoresist on one of the surface insulating layers from among the top surface insulating layer and the bottom surface insulating layer, included in the photo patterning step is a step of the top surface insulating layer being removed in the form of one or more of a closed loop and one surface of the silicon substrate being exposed in the form of one or more of a closed loop; forming a silicon trench by conducting silicon etching on the photo patterned region; forming a first insulating layer inside the silicon trench; growing a conductive material (such as polysilicon) including the inside of the silicon trench in which the insulating layer is formed, and filling the inside of the silicon trench with polysilicon; removing an unneeded portion of the polysilicon; removing the insulating layer on the one surface inside at least one or more closed loop from the one or more closed loops; and covering the top of the closed loop from which the insulating layer on the one surface has been removed, and forming a first bonding portion for contacting the polysilicon inside the silicon trench.

Inventors:

SEO PYUNG BO (KR)
LEE JONG SUNG (KR)

Application Number:

PCT/KR2015/004919

Publication Date:

October 13, 2016

Filing Date:

May 15, 2015

Export Citation:

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Assignee:

STANDING EGG INC (KR)

International Classes:

H01L23/522; H01L21/027; H01L21/31; H01L21/768

Foreign References:

KR20100112699A	2010-10-20
KR20140014251A	2014-02-05
KR20080016340A	2008-02-21
US20050121768A1	2005-06-09
US20110095435A1	2011-04-28

Attorney, Agent or Firm:

KIM, YOUNG DAE (KR)
김영대 (KR)

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