Title:
METHOD FOR MANUFACTURING ELECTRON SOURCE
Document Type and Number:
WIPO Patent Application WO/2014/041714
Kind Code:
A1
Abstract:
This method for manufacturing an electron source includes a preparation step, an addition step, an anodizing step, an insulating-film formation step, and a second-electrode formation step. In the preparation step, a first electrode and a p-type multicrystal semiconductor layer covering the first electrode are prepared. In the addition step, an impurity atom having an electronic number one less than that of the constituent element of the p-type multicrystal semiconductor layer is added to a prescribed region of the p-type multicrystal semiconductor layer. In the anodizing step, a semiconductor microcrystal aligned in the thickness direction of the p-type multicrystal semiconductor layer is formed between adjoining grains in the prescribed region by anodizing the prescribed region. In the insulating-film formation step, an insulating film is formed on the surface of the semiconductor microcrystal. In the second-electrode formation step, a second electrode is formed on the prescribed region.
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Inventors:
MURAI AKIHIKO
FUKSHIMA HIROSHI
ICHIHARA TSUTOMU
TSUBAKI KENJI
FUKSHIMA HIROSHI
ICHIHARA TSUTOMU
TSUBAKI KENJI
Application Number:
PCT/JP2013/001506
Publication Date:
March 20, 2014
Filing Date:
March 08, 2013
Export Citation:
Assignee:
PANASONIC CORP (JP)
International Classes:
H01J9/02
Domestic Patent References:
| WO2001071759A1 | 2001-09-27 |
Foreign References:
| JP2011216354A | 2011-10-27 | |||
| JPH03131070A | 1991-06-04 | |||
| JP2005276693A | 2005-10-06 | |||
| JP2003338619A | 2003-11-28 |
Attorney, Agent or Firm:
NISHIKAWA, Yoshikiyo et al. (JP)
Yoshikiyo Nishikawa (JP)
Yoshikiyo Nishikawa (JP)
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