Title:
METHOD FOR MANUFACTURING HARD MASK, METHOD FOR MANUFACTURING PATTERN, AND SEMICONDUCTOR STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2023/040261
Kind Code:
A1
Abstract:
Provided in the present disclosure are a method for manufacturing a hard mask, a method for manufacturing a pattern, and a semiconductor structure. The method for manufacturing a hard mask comprises: providing a substrate, wherein a patterned sacrificial layer is formed on the substrate; forming a first protective layer, wherein the first protective layer at least covers a side wall of the sacrificial layer; forming a first mask layer, wherein the first mask layer covers a side wall of the first protective layer; removing the sacrificial layer; and removing the first protective layer at the side wall of the first mask layer. By means of the technical solution, a complete sacrificial layer is retained, and therefore after the sacrificial layer is removed, the position of a hard mask formed by means of removing the first protective layer at a side wall of the first mask layer is accurate and has no offset; and when a pattern is transferred downwards, the uneven subsequent critical sizes caused by a position deviation of the hard mask is prevented, thereby improving the yield of a semiconductor device.
Inventors:
CHEN MENG-CHENG (CN)
Application Number:
PCT/CN2022/087973
Publication Date:
March 23, 2023
Filing Date:
April 20, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/033
Foreign References:
| CN112563122A | 2021-03-26 | |||
| CN112768350A | 2021-05-07 | |||
| CN112992669A | 2021-06-18 | |||
| US20080169567A1 | 2008-07-17 | |||
| CN110010447A | 2019-07-12 | |||
| CN111524795A | 2020-08-11 |
Attorney, Agent or Firm:
SHANGHAI WINSUN INTELLECTUAL PROPERTY AGENCY (CN)
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