Title:
METHOD FOR MANUFACTURING IGBT DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/193339
Kind Code:
A1
Abstract:
A method for manufacturing an IGBT device. An n-type charge storage region (22) is formed after a first trench (31) is formed, and the depth of the n-type charge storage region (22) is controlled by controlling the depth of the first trench (31); a floating p-type column (23) is first formed, and then a gate (25) is formed; and the n-type charge storage region (22), the p-type column (23), and the gate (25) are formed by means of a self-alignment process.
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Inventors:
LIU WEI (CN)
WANG PENGFEI (CN)
LIU LEI (CN)
GONG YI (CN)
WANG PENGFEI (CN)
LIU LEI (CN)
GONG YI (CN)
Application Number:
PCT/CN2022/098586
Publication Date:
October 12, 2023
Filing Date:
June 14, 2022
Export Citation:
Assignee:
SUZHOU ORIENTAL SEMICONDUCTOR CO LTD (CN)
International Classes:
H01L21/331; H01L29/423
Foreign References:
| CN110137249A | 2019-08-16 | |||
| CN105551964A | 2016-05-04 | |||
| CN113838920A | 2021-12-24 | |||
| JP2014207326A | 2014-10-30 | |||
| CN113643968A | 2021-11-12 |
Attorney, Agent or Firm:
BEYOND ATTORNEYS AT LAW (CN)
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