Title:
SEMICONDUCTOR MEMORY, REFRESHING METHOD, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/193340
Kind Code:
A1
Abstract:
A semiconductor memory (10), a refreshing method, and an electronic device (50). The semiconductor memory (10) comprises a main storage area (11) and a flag storage area (12). A plurality of storage rows (111-1, 111-2) are provided in the main storage area (11), and a plurality of first flag bits (121-1, 121-2) are provided in the flag storage area (12), wherein each storage row (111-1, 111-2) has a correspondence relationship with one first flag bit (121-1, 121-2), and each first flag bit (121-1, 121-2) is used for indicating whether each storage row (111-1, 111-2) is a hammer row of a row hammer event.
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Inventors:
LU HUAN (CN)
Application Number:
PCT/CN2022/098668
Publication Date:
October 12, 2023
Filing Date:
June 14, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
G11C11/402; G11C11/406; G11C11/409
Foreign References:
US20170011792A1 | 2017-01-12 | |||
CN112106138A | 2020-12-18 | |||
CN108154895A | 2018-06-12 | |||
CN112767983A | 2021-05-07 | |||
US10572377B1 | 2020-02-25 | |||
CN109408258A | 2019-03-01 |
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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