METHOD FOR MANUFACTURING NITRIDE ELECTRONIC DEVICES

Title:

METHOD FOR MANUFACTURING NITRIDE ELECTRONIC DEVICES

Document Type and Number:

WIPO Patent Application WO/2012/137309

Kind Code:

A1

Abstract:

Provided is a method for manufacturing nitride electronic devices that is capable of reducing gate leakage currents. After placing a substrate product in a growth furnace at time t0, the substrate temperature is increased to 950°C. At time t3 when the substrate temperature is sufficiently stabilized, trimethyl gallium and ammonia are supplied to the growth furnace to grow an i-GaN film. At time t5, the substrate temperature reaches 1080°C. At time t6 when the substrate temperature is sufficiently stabilized, trimethyl gallium, trimethyl aluminum and ammonia are supplied to the growth furnace to grow an i-AlGaN film. After film-formation is stopped by stopping the supply of trimethyl gallium and trimethyl aluminum at time t7, the ammonia and hydrogen atmosphere in the growth furnace chamber is promptly changed to a nitrogen atmosphere by stopping the supply of ammonia and hydrogen to the growth furnace and starting the supply of nitrogen. After the nitrogen atmosphere is formed, the reduction in substrate temperature is initiated at time t8.

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Inventors:

SAITOH YU (JP)
OKADA MASAYA (JP)
KIYAMA MAKOTO (JP)

Application Number:

PCT/JP2011/058639

Publication Date:

October 11, 2012

Filing Date:

April 05, 2011

Export Citation:

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Assignee:

SUMITOMO ELECTRIC INDUSTRIES (JP)
SAITOH YU (JP)
OKADA MASAYA (JP)
KIYAMA MAKOTO (JP)

International Classes:

H01L21/338; H01L21/20; H01L21/205; H01L21/336; H01L29/12; H01L29/778; H01L29/78; H01L29/80; H01L29/812

Foreign References:

JP2011035066A	2011-02-17
JP2009231550A	2009-10-08
JP2010232464A	2010-10-14
JP2005101623A	2005-04-14
JP2011049521A	2011-03-10
JPH08125222A	1996-05-17
JP2009032796A	2009-02-12

Attorney, Agent or Firm:

HASEGAWA Yoshiki et al. (JP)
Yoshiki Hasegawa (JP)

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