Title:
METHOD FOR MANUFACTURING ORGANIC THIN FILM TRANSISTOR, AND ORGANIC THIN FILM TRANSISTOR AND SHEET THEREOF MANUFACTURED BY SUCH METHOD
Document Type and Number:
WIPO Patent Application WO/2005/064703
Kind Code:
A1
Abstract:
Disclosed is a method for manufacturing an organic thin film transistor wherein after formation of a layer containing a thermoplastic semiconductor material and another layer joined thereto and containing metal particles, the layers are pressed and then heated, or alternatively pressed and heated at the same time, so as to be formed into a semiconductor layer, a source electrode and a drain electrode. Also disclosed is an organic thin film transistor sheet which is characterized in that a plurality of organic thin film transistors are connected via a gate bus line and a source bus line on a supporting sheet, and at least a part of a metal phase constituting the source electrode and drain electrode of each thin film transistor is mixed into a semiconductor layer containing a thermoplastic semiconductor material, so that the electrodes are joined to the semiconductor layer.
Inventors:
HIRAI KATSURA (JP)
Application Number:
PCT/JP2004/018622
Publication Date:
July 14, 2005
Filing Date:
December 14, 2004
Export Citation:
Assignee:
KONICA MINOLTA HOLDINGS INC (JP)
HIRAI KATSURA (JP)
HIRAI KATSURA (JP)
International Classes:
H01L51/00; H01L51/40; (IPC1-7): H01L51/00; H01L21/28; H01L21/336
Foreign References:
| JP2003309268A | 2003-10-31 | |||
| JP2002204012A | 2002-07-19 | |||
| JPH05206129A | 1993-08-13 |
Other References:
ZAUMSEIL J. ET AL: "Contact resistance in organic transistors that use source and drain formed by soft contact lamination.", J. APPL. PHYS., vol. 93, no. 10, 15 May 2003 (2003-05-15), pages 6117 - 6124, XP001165666
Download PDF: