Title:
METHOD FOR MANUFACTURING OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2020/184777
Kind Code:
A1
Abstract:
A method for manufacturing an oxide semiconductor thin film transistor is disclosed. A method for manufacturing an oxide semiconductor thin film transistor, according to an embodiment of the present invention, comprises the steps of: forming an oxide semiconductor layer including a channel region, a source region, and a drain region on a substrate; forming a gate-insulating layer on the channel region; forming a gate electrode on the gate-insulating layer; and forming a source electrode and a drain electrode on the source region and the drain region, respectively, wherein the forming of the oxide semiconductor layer further includes selectively plasma-treating the source region and the drain region of the oxide semiconductor layer with a fluorine (F)-based gas, wherein the source region and the drain region contain a fluorine element at a concentration of 2X1014/cm3 to 17.5X1021/cm3.
Inventors:
JANG JIN (KR)
LEE SU HUI (KR)
LEE SU HUI (KR)
Application Number:
PCT/KR2019/004534
Publication Date:
September 17, 2020
Filing Date:
April 16, 2019
Export Citation:
Assignee:
UNIV INDUSTRY COOPERATION GROUP KYUNG HEE UNIV (KR)
International Classes:
H01L21/02; H01L29/786; H01L21/324; H01L29/66
Foreign References:
| KR20140025224A | 2014-03-04 | |||
| KR20170041433A | 2017-04-17 | |||
| KR20190014991A | 2019-02-13 | |||
| KR101810575B1 | 2017-12-20 | |||
| KR20150030033A | 2015-03-19 |
Attorney, Agent or Firm:
KIM, Youn Gwon (KR)
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