Title:
METHOD FOR MANUFACTURING POWER SEMICONDUCTOR MODULE
Document Type and Number:
WIPO Patent Application WO/2022/205504
Kind Code:
A1
Abstract:
Provided in the present application is a method for manufacturing a power semiconductor module. The method comprises the following steps: providing a heat-dissipation substrate, and arranging a power semiconductor chip on a surface of one side of the heat-dissipation substrate; forming a prefabricated water channel layer on the side of the heat-dissipation substrate that faces away from the power semiconductor chip, wherein the prefabricated water channel layer has a plurality of special-shaped recesses that penetrate through the prefabricated water channel layer, the special-shaped recess exposing a surface of the side of the heat-dissipation substrate that faces away from the power semiconductor chip; filling each special-shaped recess with a heat-conducting material to form a plurality of special-shaped cooling fins that are connected to the heat-dissipation substrate; forming a top encapsulation layer on a surface of the side of the prefabricated water channel layer that faces the heat-dissipation substrate, wherein the top encapsulation layer covers the heat-dissipation substrate and the power semiconductor chip; forming a bottom encapsulation layer on a surface of the side of the prefabricated water channel layer that faces away from the heat-dissipation substrate, wherein the bottom encapsulation layer covers a surface of the side of the prefabricated water channel layer that faces away from the power semiconductor chip; and removing the prefabricated water channel layer to form a water channel. By means of the method, a power semiconductor module having a special-shaped cooling fin can be formed, thereby reducing the forming difficulty of the special-shaped cooling fin, and saving the process cost.
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Inventors:
LEI GUANGYIN (CN)
ZOU QIANG (CN)
FAN ZHIBIN (CN)
ZOU QIANG (CN)
FAN ZHIBIN (CN)
Application Number:
PCT/CN2021/087096
Publication Date:
October 06, 2022
Filing Date:
April 14, 2021
Export Citation:
Assignee:
GUANGHUA LINGANG ENGINEERING APPLICATION AND TECH R&D SHANGHAI CO LTD (CN)
International Classes:
H01L23/367; H01L23/473
Foreign References:
| CN111554644A | 2020-08-18 | |||
| CN107852811A | 2018-03-27 | |||
| CN108269772A | 2018-07-10 | |||
| CN109789486A | 2019-05-21 | |||
| CN206217110U | 2017-06-06 | |||
| CN111108819A | 2020-05-05 | |||
| US20120275116A1 | 2012-11-01 |
Attorney, Agent or Firm:
SUNSHINE INTELLECTUAL PROPERTY INTERNATIONAL CO., LTD. (CN)
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