Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND PLASMA DOPING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2011/013271
Kind Code:
A1
Abstract:
An impurity introduced layer (105) is formed by introducing, using a plasma doping method, an impurity into a fin-type semiconductor region (102) formed on a substrate (100). Furthermore, a carbon introduced layer is formed to overlap at least a part of the impurity introduced layer (105) by introducing carbon into the fin-type semiconductor region (102) using a plasma doping method.
Inventors:
SASAKI YUICHIRO
OKASHITA KATSUMI
MIZUNO BUNJI
OKASHITA KATSUMI
MIZUNO BUNJI
Application Number:
PCT/JP2010/002215
Publication Date:
February 03, 2011
Filing Date:
March 26, 2010
Export Citation:
Assignee:
PANASONIC CORP (JP)
SASAKI YUICHIRO
OKASHITA KATSUMI
MIZUNO BUNJI
SASAKI YUICHIRO
OKASHITA KATSUMI
MIZUNO BUNJI
International Classes:
H01L21/336; H01L21/265; H01L29/786
Domestic Patent References:
| WO2008090771A1 | 2008-07-31 | |||
| WO2006114976A1 | 2006-11-02 |
Foreign References:
| JP2006216833A | 2006-08-17 |
Attorney, Agent or Firm:
MAEDA, Hiroshi et al. (JP)
Hiroshi Maeda (JP)
Hiroshi Maeda (JP)
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