METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS

WIPO Patent Application WO/2004/027849

A1

An oxidant supplying unit (30) comprises an ozonizer (31) for producing ozone (32), a bubbler (34) wherein deionized water (35) is kept and an ozone supplying pipe (33) for supplying ozone (32) from the ozonizer (31) is immersed in the deionized water (35) so as to form bubbles of ozone, and a supplying pipe (36) for supplying an oxidant (37) which contains OH∗ produced by the ozone bubbles. The unit (30) is connected to a feeding pipe (18) of an oxide film forming apparatus (10). Since the oxidant which contains OH∗ produced by the ozone bubbles in water has a strong oxidizing power, an oxide film can be formed over a wafer at relatively low temperatures in a short time. Since no plasma is used, a semiconductor device or a circuit pattern previously formed on the wafer can be prevented from being damaged by a plasma. Consequently, the oxide film forming apparatus is improved in the throughput, performance and reliability.

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HORITA SUSUMU (JP)
NAKATA YASUNORI (JP)
SEKI MASAO (JP)
HORII SADAYOSHI (JP)
MIYA HIRONOBU (JP)
HASHIBA YOSHIAKI (JP)

PCT/JP2003/011988

April 01, 2004

September 19, 2003

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HITACHI INT ELECTRIC INC (JP)
HORITA SUSUMU (JP)
NAKATA YASUNORI (JP)
SEKI MASAO (JP)
HORII SADAYOSHI (JP)
MIYA HIRONOBU (JP)
HASHIBA YOSHIAKI (JP)

H01L21/316; H01L21/00; (IPC1-7): H01L21/316; H01L21/302

JPH01239933A	1989-09-25
US5693578A	1997-12-02
JPH0529307A	1993-02-05

Kajiwara, Tatuya (Central Nishi-Shinjuku 9-5, Nishi-Shinjuku 8-chom, Shinjuku-ku Tokyo, JP)

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