Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, SEMICONDUCTOR DEVICE AND PROGRAM
Document Type and Number:
WIPO Patent Application WO/2016/046909
Kind Code:
A1
Abstract:
This method for manufacturing a semiconductor device performs: a step for forming an amorphous metal film on a substrate by carrying out, a predetermined number of times in a time division manner, a step wherein a first amorphous metal layer is formed on the substrate by simultaneously supplying a metal-containing gas and a first reducing gas to the substrate and a step wherein a second amorphous metal layer is formed on the first amorphous metal layer by supplying the metal-containing gas and a second reducing gas to the substrate, on which the first amorphous metal layer has been formed, a predetermined number of times in a time division manner; and a step for forming a crystallized metal layer on the substrate by simultaneously supplying the metal-containing gas and the first reducing gas to the substrate, on which the amorphous metal film has been formed.
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Inventors:
OGAWA ARITO (JP)
Application Number:
PCT/JP2014/075232
Publication Date:
March 31, 2016
Filing Date:
September 24, 2014
Export Citation:
Assignee:
HITACHI INT ELECTRIC INC (JP)
International Classes:
H01L21/285; C23C16/14
Foreign References:
| JP2008091844A | 2008-04-17 | |||
| JP2010524261A | 2010-07-15 | |||
| JP2007046134A | 2007-02-22 |
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