Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2010/067517
Kind Code:
A1
Abstract:
The following method for manufacturing a semiconductor device is used for the purpose of manufacturing a semiconductor device in a short time by reducing the time required for a single crystal film-forming step in a lateral solid-phase epitaxial growth method.
Specifically, the method for manufacturing a semiconductor device comprises: a film-forming step wherein a wafer (200) having a single crystal silicon part (403) and an insulating film (401) exposed from the surface is exposed to a gas atmosphere containing Si as a constituent element, thereby forming an amorphous silicon film (402) on the single crystal silicon part (403) and the insulating film (401); a heating step wherein, after the film-forming step, the silicon film (402) is heated, thereby forming the silicon film (402) into a single crystal based on the single crystal silicon part (403); and a selective growth step wherein, after the heating step, the wafer (200) is exposed to a mixed atmosphere of a gas containing Si as a constituent element and a gas containing Cl as a constituent element, thereby removing the part which has not been formed into a single crystal, while leaving the part which has been formed into a single crystal in place. The film-forming step, the heating step and the selective growth step are performed on the wafer (200) one or more times.
Inventors:
HASHIBA YOSHIAKI (JP)
Application Number:
PCT/JP2009/006013
Publication Date:
June 17, 2010
Filing Date:
November 11, 2009
Export Citation:
Assignee:
HITACHI INT ELECTRIC INC (JP)
HASHIBA YOSHIAKI (JP)
HASHIBA YOSHIAKI (JP)
International Classes:
H01L21/20; H01L21/02; H01L21/205; H01L21/336; H01L21/8234; H01L27/00; H01L27/088; H01L27/12; H01L29/786
Foreign References:
| JPH0277113A | 1990-03-16 | |||
| JPS60152018A | 1985-08-10 | |||
| JPS58120595A | 1983-07-18 | |||
| JPH02153523A | 1990-06-13 | |||
| JP2008522442A | 2008-06-26 | |||
| JPH05251407A | 1993-09-28 | |||
| JPS6476718A | 1989-03-22 | |||
| JPH0992621A | 1997-04-04 | |||
| JPH0582448A | 1993-04-02 |
Attorney, Agent or Firm:
POLAIRE I. P. C. (JP)
Polaire Intellectual Property Corporation (JP)
Polaire Intellectual Property Corporation (JP)
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