SOI WAFER MANUFACTURING METHOD - SHINETSU HANDOTAI KK

Title:

SOI WAFER MANUFACTURING METHOD

Document Type and Number:

WIPO Patent Application WO/2010/067516

Kind Code:

A1

Abstract:

Provided is a method for manufacturing an SOI wafer having an embedded oxide film of a predetermined thickness by executing a thermal process to reduce the thickness of the embedded oxide film, on an SOI wafer material having an SOI layer formed on the embedded oxide film. The thickness of the SOI layer of the SOI wafer material to be subjected to the thermal process for reducing the thickness of the embedded oxide film is calculated in accordance with the ratio of the thickness of the embedded oxide film to be reduced by the thermal process with respect to an allowance of the change amount of the in-plane range of the embedded oxide film caused by the thermal process. The SOI wafer material having the calculated SOI layer thickness obtained by reducing the bond wafer film thickness is subjected to the thermal process to reduce the embedded oxide film thickness. This can suppress degradation of the in-plane distribution of the embedded oxide film caused by the uneven thermal process temperature when executing the thermal process for reducing the thickness of the embedded oxide film and realize an SOI wafer having an excellent uniformity of the embedded oxide film thickness.

Inventors:

ISHIZUKA TOHRU (JP)
KOBAYASHI NORIHIRO (JP)
AGA HIROJI (JP)
NOTO NOBUHIKO (JP)

Application Number:

PCT/JP2009/006007

Publication Date:

June 17, 2010

Filing Date:

November 11, 2009

Export Citation:

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Assignee:

SHINETSU HANDOTAI KK (JP)
ISHIZUKA TOHRU (JP)
KOBAYASHI NORIHIRO (JP)
AGA HIROJI (JP)
NOTO NOBUHIKO (JP)

International Classes:

H01L27/12; H01L21/02

Foreign References:

JP2004221198A	2004-08-05
JP2006156770A	2006-06-15
JPH10242154A	1998-09-11
JP2000036445A	2000-02-02
JP2004221198A	2004-08-05
JP2006156770A	2006-06-15

Other References: