Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2012/077443
Kind Code:
A9
Abstract:
A silicon carbide substrate having a surface is prepared. Impurity regions (123-125) are formed by carrying out ion implantation into the silicon carbide substrate through the surface. Annealing is carried out for the purpose of activating the impurity regions. The annealing comprises: a step for irradiating the surface of the silicon carbide substrate with first laser light that has a first wavelength; and a step for irradiating the surface of the silicon carbide substrate with second laser light that has a second wavelength. The silicon carbide substrate has first and second extinction coefficients respectively at the first and second wavelengths. The ratio of the first extinction coefficient to the first wavelength is larger than 5 × 105/m. The ratio of the second extinction coefficient to the second wavelength is smaller than 5 × 105/m. Consequently, damage to the surface of the silicon carbide substrate during the laser annealing can be reduced.
Inventors:
KUBOTA RYOSUKE (JP)
WADA KEIJI (JP)
MASUDA TAKEYOSHI (JP)
SHIOMI HIROMU (JP)
WADA KEIJI (JP)
MASUDA TAKEYOSHI (JP)
SHIOMI HIROMU (JP)
Application Number:
PCT/JP2011/075590
Publication Date:
November 08, 2012
Filing Date:
November 07, 2011
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
KUBOTA RYOSUKE (JP)
WADA KEIJI (JP)
MASUDA TAKEYOSHI (JP)
SHIOMI HIROMU (JP)
KUBOTA RYOSUKE (JP)
WADA KEIJI (JP)
MASUDA TAKEYOSHI (JP)
SHIOMI HIROMU (JP)
International Classes:
H01L21/265; H01L21/336; H01L29/12; H01L29/78
Attorney, Agent or Firm:
Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)
Patent business corporation Fukami patent firm (JP)
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Claims: