METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND DEVICE

WIPO Patent Application WO/2012/090482

A1

Provided in the present invention is a method of manufacturing a semiconductor device, and the device, wherein a desired effective work function can be obtained using the PVD method, and leak current can be reduced without increasing the oxide-film thickness converted film thickness thereof. A method of manufacturing semiconductor device of one embodiment of the present invention comprises a process for preparing a substrate upon which is formed an insulation film having a higher relative dielectric constant than a silicone oxide film, and a process for accumulating a metal-nitride film upon the insulation film. The process for accumulating a metal-nitride film is a sputtering accumulation process that uses, within a processing chamber (100) wherein decompression is possible: a metal target; and a cusped magnetic field (411) to be formed on the surface of the metal target by a magnet mechanism (405), which is an arrangement in which a plurality of magnet pieces (406) for forming lattice points are arranged in lattice-form, and arranged so that adjacent magnet pieces (406) have heteropolarity with each other.

KITANO NAOMU (JP)
SEINO TAKUYA (JP)
MATSUO AKIRA (JP)
SATO YU (JP)
MORIMOTO EITARO (JP)

PCT/JP2011/007292

July 05, 2012

December 27, 2011

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CANON ANELVA CORP (JP)
KITANO NAOMU (JP)
SEINO TAKUYA (JP)
MATSUO AKIRA (JP)
SATO YU (JP)
MORIMOTO EITARO (JP)

C23C14/06; H01L29/78; C23C14/35; H01L21/28; H01L21/285; H01L21/8238; H01L27/092; H01L29/423; H01L29/49

WO2009157186A1	2009-12-30
WO2010004890A1	2010-01-14

JP2000353674A	2000-12-19
JPH10195640A	1998-07-28
JP2010090424A	2010-04-22
JP2001152332A	2001-06-05
JP2000003885A	2000-01-07
JP2009529789A	2009-08-20

OKABE, Yuzuru et al. (JP)
Okabe 讓 (JP)

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