METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Title:

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Document Type and Number:

WIPO Patent Application WO/2014/185360

Kind Code:

A1

Abstract:

A first space partitioned by first and second line patters (52, 53) is filled with a multilayer film that is composed of a first silicon film (55) having a high impurity concentration (a first concentration) relative to a standard plug impurity concentration (a third concentration) and a second silicon film (57) having a low impurity concentration (a second concentration) relative to the standard plug impurity concentration, and is divided by forming a groove (59) using a mask film (58) on the side wall of the second line pattern (53). As a result, expansion of a seam, which is formed only on the second silicon film (57) having a low impurity concentration, is suppressed. After that, an isolation insulating film is embedded in the groove and impurity diffusion is carried out by a heat treatment, so that divided plugs (60) as a whole are made to have the third concentration.

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Inventors:

TONARI KAZUAKI (JP)
TOGASHI YUKI (JP)

Application Number:

PCT/JP2014/062507

Publication Date:

November 20, 2014

Filing Date:

May 09, 2014

Export Citation:

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Assignee:

PS4 LUXCO SARL (LU)
TONARI KAZUAKI (JP)
TOGASHI YUKI (JP)

International Classes:

H01L21/28; H01L21/768; H01L21/8242; H01L23/522; H01L27/108

Foreign References:

JP2011243960A	2011-12-01
JPH04208529A	1992-07-30
JP2013201414A	2013-10-03
JP2013093512A	2013-05-16

Attorney, Agent or Firm:

MIYAZAKI, Teruo et al. (JP)
Akio Miyazaki (JP)

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