Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/221546
Kind Code:
A1
Abstract:
The present invention promotes the efficiency of a step for implanting an impurity into a silicon carbide semiconductor layer. Provided is a method for manufacturing a semiconductor device having a silicon carbide semiconductor layer, which comprises an impurity implantation step wherein an impurity is implanted into an impurity implantation region in the silicon carbide semiconductor layer a plurality of times at different depths, while keeping the temperature of the silicon carbide semiconductor layer at 150°C or less. In the impurity implantation step, the impurity may be implanted into the impurity implantation region a plurality of times at different depths, while keeping the temperature of the silicon carbide semiconductor layer at room temperature or higher.
Inventors:
NISHIYAMA KATSUSHI (JP)
MIYAZAKI MASAYUKI (JP)
KITAMURA SHOJI (JP)
MIYAZAKI MASAYUKI (JP)
KITAMURA SHOJI (JP)
Application Number:
PCT/JP2017/016448
Publication Date:
December 28, 2017
Filing Date:
April 25, 2017
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L21/329; H01L21/265; H01L29/872
Domestic Patent References:
| WO2015064256A1 | 2015-05-07 | |||
| WO2013100155A1 | 2013-07-04 |
Foreign References:
| JP2001332508A | 2001-11-30 | |||
| JP2002261041A | 2002-09-13 | |||
| JP2008244435A | 2008-10-09 | |||
| JPH05211128A | 1993-08-20 | |||
| JP2011204817A | 2011-10-13 | |||
| JP2001015760A | 2001-01-19 | |||
| JPH07105902A | 1995-04-21 |
Attorney, Agent or Firm:
RYUKA IP LAW FIRM (JP)
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