METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2019/012875

A1

In the present invention, the surface of a surface electrode (7) and that of a polyimide protective film (8) are protected by a resist protective film (22). Next, with a BG tape (23) attached to the resist protective film (22), a semiconductor substrate (10) is thinned to a product thickness (t) by grinding the rear surface thereof. Next, the BG tape (23) is peeled off, and thereafter a prescribed diffusion region is formed in the surface layer of the ground rear surface of the semiconductor substrate (10). Next, the resist protective film (22) is heated at a temperature of at least 100°C to evaporate water inside the resist protective film (22). Next, irradiation with a laser (25) is performed from the rear surface of the semiconductor substrate (10) to activate impurities in the diffusion region on the rear surface side of the semiconductor substrate (10). Next, a resist protective film (22') on the front surface of the semiconductor substrate (10) is removed. The foregoing makes it possible to inhibit deterioration, peeling, and shape loss of the resist protective film (22') protecting one main surface of a semiconductor wafer during the heat treatment for activating the impurities on another main surface of the semiconductor wafer.

YOSHIMURA TAKASHI (JP)
TAKISHITA HIROSHI (JP)
MIYAHARA SEIICHI (JP)

PCT/JP2018/021925

January 17, 2019

June 07, 2018

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FUJI ELECTRIC CO LTD (JP)

H01L21/336; H01L21/265; H01L21/329; H01L29/739; H01L29/78; H01L29/861; H01L29/868

WO2012056536A1	2012-05-03
WO2014041652A1	2014-03-20

JP2017011000A	2017-01-12
JPS62299071A	1987-12-26
JP2013058616A	2013-03-28

SAKAI, Akinori (JP)

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