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Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES, AND SUBSTRATE PROCESSING SYSTEM
Document Type and Number:
WIPO Patent Application WO/2021/193016
Kind Code:
A1
Abstract:
A method for manufacturing semiconductor devices according to one embodiment of the present disclosure includes: a step for preparing a substrate that has a first conductor; a step for heating the substrate; a step for removing a native oxide film that has grown on the first conductor, by exposure of the substrate to hydrogen plasma after the step for heating; and a step for forming a second conductor on the first conductor.

Inventors:
SAKAMOTO MASATO (JP)
TAKEYASU ISSEI (JP)
ISHIZAKA TADAHIRO (JP)
Application Number:
PCT/JP2021/009288
Publication Date:
September 30, 2021
Filing Date:
March 09, 2021
Export Citation:
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Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065; C23C16/02; H01L21/768; C23C16/16
Foreign References:
JP2003077976A2003-03-14
JP2000216249A2000-08-04
JP2002158273A2002-05-31
JP2020043139A2020-03-19
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
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