Title:
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND APPARATUS FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2012/070368
Kind Code:
A1
Abstract:
Disclosed is a method for manufacturing an SiC semiconductor device, which comprises: a step for forming an oxide film (3) on the surface of an SiC substrate (1) (step S3); and a step for removing the oxide film (3) (step S5). An ozone gas is used in the step for forming the oxide film (3) (step S3). It is preferable to use halogen plasma or hydrogen plasma in the step for removing the oxide film (3) (step S5). Consequently, there can be obtained a method for manufacturing an SiC semiconductor device and an apparatus for manufacturing an SiC semiconductor device, which reduce problems related to chemical solutions, while improving the cleaning effect.
Inventors:
MIYAZAKI TOMIHITO (JP)
SHIOMI HIROMU (JP)
TAMASO HIDETO (JP)
MASUDA TAKEYOSHI (JP)
SHIOMI HIROMU (JP)
TAMASO HIDETO (JP)
MASUDA TAKEYOSHI (JP)
Application Number:
PCT/JP2011/075395
Publication Date:
May 31, 2012
Filing Date:
November 04, 2011
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
MIYAZAKI TOMIHITO (JP)
SHIOMI HIROMU (JP)
TAMASO HIDETO (JP)
MASUDA TAKEYOSHI (JP)
MIYAZAKI TOMIHITO (JP)
SHIOMI HIROMU (JP)
TAMASO HIDETO (JP)
MASUDA TAKEYOSHI (JP)
International Classes:
H01L21/304; H01L21/28; H01L21/306; H01L21/3065; H01L21/31; H01L21/336; H01L29/12; H01L29/78
Domestic Patent References:
| WO2010090024A1 | 2010-08-12 |
Foreign References:
| JPH09183700A | 1997-07-15 | |||
| JP2005064392A | 2005-03-10 | |||
| JP2001035838A | 2001-02-09 |
Attorney, Agent or Firm:
Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)
Patent business corporation Fukami patent firm (JP)
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Claims: