Title:
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/221577
Kind Code:
A1
Abstract:
When a back surface electrode (11) covers a back surface (10b), which is made to be a chamfered surface, of a SiC semiconductor wafer (10) and scribe lines cannot be confirmed, reference lines (12, 13) are formed before dicing cuts. Thus, even if the upper surface for dicing cuts is made to be a chamfered surface, scribe lines can be estimated with reference to the reference lines (12, 13) and cutting can be performed. Therefore, even if cutting is performed at higher speeds than the conventional, high-quality SiC semiconductor devices with little chipping can be manufactured, and costs can be lowered with little blade wear.
Inventors:
NAGAYA MASATAKE (JP)
KAWAI JUN (JP)
TOMITA YOSUKE (JP)
KAWAI JUN (JP)
TOMITA YOSUKE (JP)
Application Number:
PCT/JP2017/017873
Publication Date:
December 28, 2017
Filing Date:
May 11, 2017
Export Citation:
Assignee:
DENSO CORP (JP)
International Classes:
H01L21/301; H01L21/336; H01L29/12; H01L29/78
Foreign References:
| JP2006086200A | 2006-03-30 | |||
| JP2009105211A | 2009-05-14 | |||
| JP2014013812A | 2014-01-23 | |||
| JP2013161944A | 2013-08-19 |
Attorney, Agent or Firm:
YOU-I PATENT FIRM (JP)
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