Title:
METHOD FOR MANUFACTURING TFT SUBSTRATE AND TFT SUBSTRATE MANUFACTURED THEREBY
Document Type and Number:
WIPO Patent Application WO/2017/008368
Kind Code:
A1
Abstract:
A method for manufacturing TFT (Thin Film Transistor) and a TFT substrate manufactured thereby. The method employs the SPC (Solid Phase Crystallization) technology to prepare an LTPS (Low Temperature Poly-Silicon) layer, and enables better cost saving and forms crystal grains with better uniformity as compared to the excimer laser crystallization technology. Meanwhile, a double-gate structure is introduced, thereby enhancing the control of gates over channels, boosting the ON current of the thin film transistor, reducing the OFF current, suppressing the warpage effect, reducing the threshold voltage and sub-threshold slope, and improving the drivability of the thin film transistor. And also, the top gate may play a light shielding role to reduce the phenomenon of channel photo-current leakage. The LTPS layer of the TFT substrate is prepared using the SPC method, and the production cost is relatively low accordingly. In addition, the TFT substrate also has a double-gate structure, so that the thin film transistor is given better electric property and high drivability and the phenomenon of channel photo-current leakage becomes less likely to occur.
Inventors:
ZHOU XINGYU (CN)
WU YUANCHUN (CN)
WU YUANCHUN (CN)
Application Number:
PCT/CN2015/087720
Publication Date:
January 19, 2017
Filing Date:
August 21, 2015
Export Citation:
Assignee:
SHENZHEN CHINA STAR OPTOELECT (CN)
International Classes:
H01L27/12; H01L29/423; H01L29/66; H01L29/786
Foreign References:
| CN104576399A | 2015-04-29 | |||
| CN104409350A | 2015-03-11 | |||
| CN104409512A | 2015-03-11 | |||
| CN103390592A | 2013-11-13 | |||
| CN1725510A | 2006-01-25 | |||
| EP1020899A2 | 2000-07-19 |
Attorney, Agent or Firm:
COMIPS INTELLECTUAL PROPERTY OFFICE (CN)
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