Title:
METHOD FOR PREPARING RESERVOIR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2023/115723
Kind Code:
A1
Abstract:
The present invention belongs to the technical field of artificial intelligence, and particularly relates to a method for preparing a reservoir element. The method comprises the following steps: a) sequentially arranging, on a substrate, a bottom electrode layer, a dielectric layer, a resistive layer and a top electrode layer, so as to obtain a reservoir element to be annealed; and b) performing annealing processing on the reservoir element to be annealed, so as to obtain a reservoir element, wherein the temperature of the annealing processing ranges from 300ºC to 700ºC, and the time of the annealing processing ranges from 30s to 100s. In the method provided in the present invention, after being prepared, the reservoir element is subjected to rapid annealing processing, such that defects are re-distributed after rapid annealing, thereby forming a more stable membrane; and a ferroelectric O phase can also be introduced into the membrane. By means of rapid annealing processing, the power consumption of a reservoir element can be effectively reduced, and the computing accuracy can be improved.
Inventors:
XU XIAOXIN (CN)
SUN WENXUAN (CN)
YU JIE (CN)
LAI JINRU (CN)
ZHENG XU (CN)
DONG DANIAN (CN)
SUN WENXUAN (CN)
YU JIE (CN)
LAI JINRU (CN)
ZHENG XU (CN)
DONG DANIAN (CN)
Application Number:
PCT/CN2022/080856
Publication Date:
June 29, 2023
Filing Date:
March 15, 2022
Export Citation:
Assignee:
INST OF MICROELECTRONICS CAS (CN)
International Classes:
H01L45/00
Foreign References:
| CN111312898A | 2020-06-19 | |||
| US20160197271A1 | 2016-07-07 | |||
| CN110676375A | 2020-01-10 | |||
| CN112488308A | 2021-03-12 |
Attorney, Agent or Firm:
UNITALEN ATTORNEYS AT LAW (CN)
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