Title:
METHOD FOR PREPARING SEMICONDUCTOR SUBSTRATE WITH SMOOTH EDGES
Document Type and Number:
WIPO Patent Application WO/2015/074480
Kind Code:
A1
Abstract:
A method for preparing a semiconductor substrate with smooth edges comprises the following steps: providing a first substrate and a second substrate; forming an insulating layer on the surface of the first substrate and/or the second substrate; using the insulating layer as an intermediate layer to bond the first substrate and the second substrate; implementing chamfering processing on the bonded first substrate and insulating layer; and implementing edge polishing on the first substrate and insulating layer after chamfering processing. The advantage lies in that, edge polishing processing is performed on a first substrate and an insulating layer on which a chamfering step is implemented, so as to significantly reduce residual material debris of the insulating layer on an edge area caused in the chamfering step, thereby improving a product yield.
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Inventors:
YE FEI (CN)
CHEN GUOXING (CN)
CHEN MENG (CN)
CHEN GUOXING (CN)
CHEN MENG (CN)
Application Number:
PCT/CN2014/089981
Publication Date:
May 28, 2015
Filing Date:
October 31, 2014
Export Citation:
Assignee:
SHANGHAI SIMGUI TECHNOLOGY CO (CN)
International Classes:
H01L21/762; H01L21/304; H01L21/3105
Foreign References:
| CN103560105A | 2014-02-05 | |||
| CN102768981A | 2012-11-07 | |||
| CN1225499A | 1999-08-11 | |||
| US20100190416A1 | 2010-07-29 |
Attorney, Agent or Firm:
SHANGHAI ESSEN PATENT & TRADEMARK OFFICE (CN)
上海翼胜专利商标事务所（普通合伙） (CN)
上海翼胜专利商标事务所（普通合伙） (CN)
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