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Title:
METHOD FOR PROCESSING SEMICONDUCTOR SURFACE DEFECT AND METHOD FOR PREPARING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/134474
Kind Code:
A1
Abstract:
The present disclosure provides a method for processing a semiconductor surface defect and a method for preparing a semiconductor device. The method for processing a semiconductor surface defect comprises: providing a semiconductor device in a plasma processing device, the semiconductor device comprising a substrate and a deposition layer formed on the surface of the substrate, and bubbles being formed in the deposition layer; and performing plasma bombardment on the surface of the deposition layer to break the bubbles, to make the surface of the deposition layer flat.

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Inventors:
JIANG XIANGHONG (CN)
Application Number:
PCT/CN2021/097458
Publication Date:
June 30, 2022
Filing Date:
May 31, 2021
Export Citation:
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Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/3065; G03F7/16; H01L21/31
Foreign References:
CN106292186A2017-01-04
US6110843A2000-08-29
CN104681483A2015-06-03
CN109148263A2019-01-04
EP0630989A21994-12-28
Attorney, Agent or Firm:
BOXIN CHINA INTELLECTUAL PROPERTY (CN)
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