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Patent Searching and Data


Title:
METHOD FOR PRODUCING GRAPHENE WITH CONTROLLED NUMBER OF LAYERS, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME
Document Type and Number:
WIPO Patent Application WO/2016/006818
Kind Code:
A1
Abstract:
Provided is a method for producing graphene, comprising the steps of: bringing a metal catalyst into contact with hydrogen gas (step a); bringing the metal catalyst in step a into contact with at least one selected from among a hydrocarbon gas, a nitrogen gas and an inert gas (step b); and forming graphene on the metal catalyst by bringing the metal catalyst in step b into contact with the hydrogen gas and the hydrocarbon gas (step c), whereby it is possible to diversely control the number of graphene layers depending on need, regardless of the surface roughness of a first metal catalyst layer, and to shorten the time for forming graphene, thereby saving manufacturing costs.

Inventors:
CHO KIL WON (KR)
LEE HYO CHAN (KR)
LEE EUN HO (KR)
Application Number:
PCT/KR2015/004897
Publication Date:
January 14, 2016
Filing Date:
May 15, 2015
Export Citation:
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Assignee:
CT FOR ADVANCED SOFT ELECTRONICS (KR)
International Classes:
C01B31/04
Foreign References:
JP2013177273A2013-09-09
JP2010212619A2010-09-24
KR20090065206A2009-06-22
Other References:
GONG, Y. ET AL.: "Layer-Controlled and Wafer-Scale Synthesis of Uniform and High-Quality Graphene Films on a Polycrystalline Nickel Catalyst.", ADVANCED FUNCTIONAL MATERIALS., vol. 22, 2012, pages 3153 - 3159, XP001582023, DOI: doi:| DOI: 10.1002/adfm.201200388
Attorney, Agent or Firm:
LEE, SOO YEOL (KR)
이수열 (KR)
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