Title:
METHOD FOR PRODUCING GRAPHENE
Document Type and Number:
WIPO Patent Application WO/2016/067597
Kind Code:
A1
Abstract:
A method for producing graphene, the method having a carbon-containing-layer formation step for forming a carbon-containing layer (7) on an underlayer (1) by atomic layer deposition, a first heat treatment step for forming an amorphous carbon layer (9) from the carbon-containing layer, and second heat treatment step for forming graphene (11) from the amorphous carbon layer. The temperature in the first heat treatment step is preferably 600°C or lower. When the carbon-containing layer includes a polymer, the number of aromatic rings included in the monomer constituting the polymer is preferably 1 or fewer.
Inventors:
KOJIMA EIJI (JP)
KATAYAMA MASAYUKI (JP)
KANO KAZUHIKO (JP)
OONISHI SHINJI (JP)
KATAYAMA MASAYUKI (JP)
KANO KAZUHIKO (JP)
OONISHI SHINJI (JP)
Application Number:
PCT/JP2015/005393
Publication Date:
May 06, 2016
Filing Date:
October 27, 2015
Export Citation:
Assignee:
DENSO CORP (JP)
International Classes:
C01B31/02
Domestic Patent References:
| WO2014038243A1 | 2014-03-13 | |||
| WO2014171320A1 | 2014-10-23 |
Foreign References:
| JP2010229022A | 2010-10-14 | |||
| JP2009143761A | 2009-07-02 | |||
| JP2014051412A | 2014-03-20 | |||
| JP2014090146A | 2014-05-15 |
Other References:
ZHEN-YU JUANG ET AL.: "Synthesis of graphene on silicon carbide substrates at low temperature", CARBON, vol. 47, no. 8, July 2009 (2009-07-01), pages 2026 - 2031, XP026104606
Attorney, Agent or Firm:
KIN, Junhi (JP)
Gold Junki (JP)
Gold Junki (JP)
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