METHOD FOR PRODUCING HYDROGEN GAS, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

Title:

METHOD FOR PRODUCING HYDROGEN GAS, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

Document Type and Number:

WIPO Patent Application WO/2018/135144

Kind Code:

A1

Abstract:

Provided is a method for producing hydrogen gas that makes it possible to easily obtain a large amount of highly pure hydrogen gas. This method for producing hydrogen gas is provided with a light irradiation step in which the surface of a metal member 100 immersed in water 2 is irradiated with light L, and gas including hydrogen is thereby generated. The metal member 100 comprises a first member containing a first metal, and a second member containing a second metal. The standard electrode potential of the first metal is higher than -2.00 V. The standard electrode potential of the second metal is higher than -2.00 V. The first member and the second member are electrically connected. At least one of an oxide and a hydroxide is formed on the surface of the metal member 100 as said gas is generated. The oxide is an oxide of at least one of the first metal and the second metal. The hydroxide is a hydroxide of at least one of the first metal and the second metal.

More Like This:

JP2020142213	PHOTOCATALYST WITH COCATALYST SUPPORTED ON THE SURFACE, AND METHOD FOR PRODUCING THE PHOTOCATALYST
JP2010527893	Production of hydrogen from boron hydride and glycerol
JP5493449	Photocatalytic hydrogen generation device

Inventors:

ADACHI SHUICHIRO (JP)
KITAGAWA MASAKI (JP)
WATANABE SEIICHI (JP)
JEEM MELBERT (JP)
NISHINO FUMIKA (JP)
TAKAHASHI YUKI (JP)

Application Number:

PCT/JP2017/042879

Publication Date:

July 26, 2018

Filing Date:

November 29, 2017

Export Citation:

Click for automatic bibliography generation Help

Assignee:

HITACHI CHEMICAL CO LTD (JP)
UNIV HOKKAIDO NAT UNIV CORP (JP)

International Classes:

C01B3/04; C25B1/04; C25B11/04; C25B11/06; H01L31/0256; H01L31/072

Domestic Patent References:

WO2016076106A1	2016-05-19
WO2016024452A1	2016-02-18

Foreign References:

JP2016098419A	2016-05-30
JP2015227503A	2015-12-17
JP2015098644A	2015-05-28
JP2012238525A	2012-12-06
JPS6268547A	1987-03-28

Attorney, Agent or Firm:

HASEGAWA Yoshiki et al. (JP)

Download PDF:

View/Download PDF PDF Help

Previous Patent: WIRELESS COMMUNICATION TERMINAL DEVICE

Next Patent: METHOD FOR PRODUCING NANOCRYSTALS AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE