Title:
METHOD FOR PRODUCING SEMICONDUCTOR CHIPS
Document Type and Number:
WIPO Patent Application WO/2019/093338
Kind Code:
A1
Abstract:
A surface S side is irradiated with an SF6 gas plasma to etch a semiconductor wafer 1 which has been peeled off in street portions, and divide the semiconductor wafer into a plurality of individual semiconductor chips. A removing agent 16 is subsequently supplied from the surface S side. At that time, it is preferable that the semiconductor wafer 1 divided into the plurality of chips is rotated at high speed. Accordingly, a mask material layer 3b remaining on the surface S is removed by the removing agent 16. Moreover, the removing agent 16 is preferably an organic solvent, and more preferably, methyl ethyl ketone, ethanol, ethyl acetate, or a combination of these.
Inventors:
UCHIYAMA TOMOAKI (JP)
AKUTSU AKIRA (JP)
YOKOI HIROTOKI (JP)
AKUTSU AKIRA (JP)
YOKOI HIROTOKI (JP)
Application Number:
PCT/JP2018/041218
Publication Date:
May 16, 2019
Filing Date:
November 06, 2018
Export Citation:
Assignee:
FURUKAWA ELECTRIC CO LTD (JP)
International Classes:
H01L21/301; C09J201/00; H01L21/304
Foreign References:
| JP2010165963A | 2010-07-29 | |||
| JP2014203954A | 2014-10-27 | |||
| JP2010161212A | 2010-07-22 | |||
| JP2003332310A | 2003-11-21 | |||
| JP2013076782A | 2013-04-25 | |||
| JP2007019385A | 2007-01-25 | |||
| JP2014192204A | 2014-10-06 |
Other References:
See also references of EP 3709338A4
Attorney, Agent or Firm:
INOUE, Seiichi (JP)
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