Title:
METHOD FOR PRODUCING SILICON CARBIDE SEMICONDUCTOR DEVICE, AND SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2015/137420
Kind Code:
A1
Abstract:
This silicon carbide semiconductor device has: an n+ silicon carbide substrate (1); an n silicon carbide epitaxial layer (2); a p+ base region (3) selectively formed on the surface layer of the n silicon carbide epitaxial layer (2); an n+ source region (6) selectively formed inside the p+ base region (3); a TiN film (11) and an Ni film (12) which function as a source electrode and are formed so as to be electrically connected to the n+ source region (6); a gate insulating film (8) formed on the surface of the p+ base region (3) section which is sandwiched between the n silicon carbide epitaxial layer (2) and the n+ source region (6); a gate electrode (9) formed on the gate insulating film (8); a drain electrode formed on the rear-surface side of the n+ silicon carbide substrate (1); and semiconductor-device metal wiring formed from an aluminum material connected to the TiN film (11) and Ni film (12) functioning as the source electrode, and then subjected to low-temperature nitrogen annealing after formation thereof. As a result, the silicon carbide semiconductor device is capable of suppressing a decrease in threshold voltage even when a negative voltage is applied to the gate at a high temperature.
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Inventors:
SUGAHARA YOSHIYUKI (JP)
TSUTSUMI TAKASHI (JP)
MAKIFUCHI YOUICHI (JP)
ARAOKA TSUYOSHI (JP)
FUKUDA KENJI (JP)
HARADA SHINSUKE (JP)
OKAMOTO MITSUO (JP)
TSUTSUMI TAKASHI (JP)
MAKIFUCHI YOUICHI (JP)
ARAOKA TSUYOSHI (JP)
FUKUDA KENJI (JP)
HARADA SHINSUKE (JP)
OKAMOTO MITSUO (JP)
Application Number:
PCT/JP2015/057218
Publication Date:
September 17, 2015
Filing Date:
March 11, 2015
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
NAT INST OF ADVANCED IND SCIEN (JP)
NAT INST OF ADVANCED IND SCIEN (JP)
International Classes:
H01L29/78; H01L21/28; H01L21/336; H01L29/12; H01L29/417
Domestic Patent References:
| WO2014027520A1 | 2014-02-20 | |||
| WO2014024568A1 | 2014-02-13 |
Foreign References:
| JP2005327799A | 2005-11-24 |
Other References:
ATTHAWUT CHANTHAPHAN ET AL.: "Understanding and controlling bias-temperature instability in SiC metal-oxide- semiconductor devices induced by unusual generation of mobile ions", APPLIED PHYSICS LETTERS, pages 093510, XP012170359
Attorney, Agent or Firm:
SAKAI, AKINORI (JP)
Akinori Sakai (JP)
Akinori Sakai (JP)
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